Welcome to Gianluigi Casse’s home page

 

Here you can find summarised part of the silicon detector activity in the Physics Department of the University of Liverpool. You can also look to my personal page, by clicking here

 

 


Silicon detector studies
This page summarises the work done in the silicon detector laboratory of the HEP Group (University of Liverpool - Department of Physics)

Experiments I am currently involved
Atlas, LHCb, RD50. Some of the work I have performed in the framework of these experiments can be found below.
 Radiation tolerance of silicon detectors
The silicon detectors will provide the main tracking capability for the future experiments in high-energy physics. In most of these experiments they will have to withstand a harsh radiation environment. The survival of the detectors to the severe radiation fluences they will receive is a challenge for the detector technology. We are involved in the development of the sensors for several of the major experiments that will take place in CERN-LHC (ATLAS, LHCb) and FERMILAB (CDF). In this page I have collected several results concerning the study of silicon detectors mainly on the subject of their radiation hardness.

SCT ATLAS sensors page: a systematic study of the radiation behaviours of the sensors for the ATLAS tracker has been carried out for a few years. The Liverpool University was heavily involved in this program. A number of results obtained within this program is collected in the following section: pre and post irradiation characterisation of SCT ATLAS sensors.


 Studies for CDF Tests for the commissioning of the Layer00 for the CDF experiment have been carried here. Results are reported in my CDF-L00 page.

 Studies for LHCb-VELO Tests for the commissioning of the Layer00 for the CDF experiment have been carried here. Results are reported in my LHCb VELO page. The study of irradiated devices is key part of the work. The irradiation plans for LHCb VELO can be found here.


CERN RD50 (Radiation hard semiconductor devices for very high luminosity colliders): I am the convener of the Full Detector Systems research line of the CERN-RD50 collaboration. To see the scope and the participant institutes to this collaboration click here. You can follow the link to find the list some of the contribution I gave to the RD50 meetings and workshops.


 Oxygen enrichment technique
I've conceived the high temperature diffusion technique to introduce high concentrations of oxygen into silicon wafers. This development was done in the frame of RD48 collaboration. It can be used for other fast diffusing element in silicon. You find here the description of this technique.
Also look in: http://rd48.web.cern.ch/RD48/, Technical Reports page, ROSE/TN/99-1.
You can find further details in Chapter 5 and Appendix B of my PhD thesis.

 Effect of oxygen enrichment on silicon detectors