Pad (5X5 mm2) diodes produced by SINTEF with oxygen diffused silicon. Silicon wafers coated with a layer of SiO2 were diffused in N2 or O2 atmosphere for 60 hours at 1150 oC. The diodes were irradiated, together with a standard reference sample, in April '99, up to 3 1014 cm-2 with the 24 GeV/c CERN/PS proton beam, in successive steps of intermediate fluences. They were annealed for 3 minutes @ 80 oC to complete the beneficial annealing before the measurement. The results are in term of full depletion voltage vs fluence and reverse current vs fluence.
Pad (5X5 mm2) diodes produced by Brookeven National Laboratory (BNL) with oxygen diffused silicon. Silicon wafers coated with a layer of SiO2 were diffused in N2 atmosphere for 9 days at 1200 oC. Non oxygenated diodes from similar but non oxygenated wafer are used as a reference. The diodes were irradiated in July '99, up to 8 1014 cm-2 with the 24 GeV/c CERN/PS proton beam, in successive steps of intermediate fluences. They were annealed for 3 minutes @ 80 oC to complete the beneficial annealing before the measurement. The results are in term of full depletion voltage vs fluence.
Pad (10X10 mm2) diodes produced by Micron Semiconductor with oxygen diffused silicon. Silicon wafers coated with a layer of SiO2 and wafers with surface implantation of oxygen ions were diffused in N2 atmosphere for 60 hours at 1100 oC. Non oxygenated diodes from similar but non oxygenated wafer are used as a reference. The diodes were irradiated in July '99, up to 4 1014 cm-2 with the 24 GeV/c CERN/PS proton beam, in successive steps of intermediate fluences. They were annealed for 3 minutes @ 80 oC to complete the beneficial annealing before the measurement. The results are in term of full depletion voltage vs fluence.
The charge collection properties of oxygenated and control (standard) diodes are compared before irradiation and after 1.7 1014 p cm-2 , 4.0 1014 p cm-2 and 8.0 1014 p cm-2 using various diodes from different producers. They were annealed for 3 minutes @ 80 oC to complete the beneficial annealing before the measurement.