Large area p-type microstrip detectors

The use of n-strips on p-type silicon for microstrip detectors can extend the lifetime of irradiated devices because of the profile of the electric field. Here I have collected the results with the first successful n-in-p prototypes. The ATLAS-SCT geometry detectors were produced by Micron Semiconductor on a Liverpool design. The strip isolation was achieved by individual p-stops.

Before irradiation:
CV of 1728-5
CV of 1728-25 
CV of 1729-7  
Strip integrity before irradiation: 1728-5, 1728-25, 1729-7.
Results after irradiation (3 1014 p cm-2):
 IV's of 1728-25 and 1729-7
 Interstrip capacitance;  central strip to two nearest neighbours each side
 Interstrip capacitance;  central strip to one nearest neighbour each side, with comparison to pre-irradiation values 

And here is the first evidence (January 2001) of improvement in term of the most relevant performance of particle detectors: the Charge Collection Efficiency (CCE) of an irradiated n-in-p is compared with the CCE of a standard and an oxygen-enriched p-in-n detectors after 3 1014 protons cm-2. The noise performances as a function of bias for the same detector are here shown. The improvement of the CCE is entirely due to the geometry of the electric field in the n-in-p diode structure and NOT to a lower full depletion voltage. This latter is not improved using p-type bulk, as it is shown here after 3 1014 protons cm-2.


Miniature (1x1 cm2) microstrip detectors

Miniature (1x1 cm-2, 100 strips) n-in-p capacitively coupled, polysilicon biased microstrip detectors have been designed by Liverpool and produced by CNM Barcelona to allow the study of their charge collection properties up to 7.5 1014 protons cm-2 (24 GeV/c proton irradiations performed in the CERN/PS IRRAD1 facility, thanks to M. Glaser). Extremely good results, very encouraging for the use of this solution for the LHC upgrade to a factor  ~ 10 increased luminosity, have been obtained and here summarised.


Results (end 2006) with Micron p-sprayed miniature (1x1 cm2) microstrip detectors

Miniature (1x1 cm-2, 100 strips) n-in-p capacitively coupled, polysilicon biased microstrip detectors have been designed by Liverpool and produced by Micron Semiconductor. They were used for neutron irradiation to confirm the excellent results obtained with the CNM detectors irradiated with protons. The excellent radiation hardness has been confirmed also with these neutron irradiation (performed in Ljubljana, thanks to the IJS group). The comparison of the preliminary results obtained after neutron irradiations are  here compared with the previous proton results. Synthetically, the p-type substrate microstrip detectors can be operated to the extreme doses anticipated for the Super LHC (with their performances tested with charged and neutral hadron fluxes, to prove their functionality at different radii where different type of particles dominate the spectrum, namely charged particles below 20cm radius and back-scattered neutrons for larger radii) and no deterioration due to reverse annealing is observed when CCE measurements are performed, instead of CV ones.