In recent years, high values of magnetoresistance (MR) have been obtained in ferromagnetic tunnel junctions and spin valve structures involving exchange-biasing antiferromagnetic metal oxide layers.[52] In particular magnetite has been suggested as a promising material for magnetoresistive sensors because of its significant spin polarisation at the Fermi level at room temperature. Magnetite's half-metallic nature could, in principle, lead to MR tending towards infinity.[53]
FeO
, Fe
O
and FeO share a common oxygen close packed plane leading to good epitaxial growth of one phase upon another along the
direction.[54] Fe
O
has been shown to have a sizeable magnetoresistance (
) at room temperature whilst
orientated layers show none at this temperature.[55] The study thus focusses on
oriented oxide layers as base layers for further epitaxial growth (eg
-Fe
O
).
The Fe stacking sequence of FeO
in the (111) direction is comprised of alternating antiferromagnetically coupled octahedrally and tetrahedrally coordinated sites. Hence each layer along the (111) direction has a well defined magnetisation direction in the plane of the sample.
Heteroepitaxial FeO
thin films were grown on two subtrates, Pt(111) and Al
O
(0001). Two different processes were used for deposition on Al
O
: A) standard sputtering source and B) using an oxygen plasma source. The oxygen plasma source gives higher quality epitaxial films on alumina substrates.[56] The three samples produced are named Fe
O
/Pt, Fe
O
/Al
O
A and Fe
O
/Al
O
B for samples grown on Pt(111), Al
O
(0001) with the oxygen plasma source and Al
O
(0001) with a normal source, respectively.
The sample FeO
/Pt was grown, using iron enriched with the
Fe isotope, to a thickness of
. Samples Fe
O
/Al
O
A and Fe
O
/Al
O
B were grown each with non-enriched iron to a nominal thickness of
.
CEMS was used to determine the magnetic hyperfine interactions, moment orientation, and the growth quality of the film.
Dr John Bland, 15/03/2003