Diffusion

The holes are allowed diffuse to the surface according to the model of Belau et al. [2], which takes account of both the broadening of the cloud of holes and of the Lorenz angle, which for a field of 1.4 Tesla, causes the holes to drift at an angle of 2.7^o. We have assumed a full depletion voltage of 50V for the silicon, and an operating voltage of 60V. We have verified that our simulation gives the same results as presented in this paper for the same operating conditions. This model has in turn been checked against data.