Simulation of the silicon detector

The simulation of the silicon detector is performed with 5 variable parameters:

• The pitch of the readout;
• The signal to noise ratio;
• The presence or absence of an intermediary strip;
• The angle of the track, $\alpha$;
• The position of the track, $\eta$, on first entering the silicon.

By integrating over values of $\eta$ from 0 to the strip pitch, the resolution can be determined as a function of crossing angle for a given pitch, signal-to-noise and presence or absence of intermediary strip.

To simulate the response, the track is stepped through the silicon in $1\mu$m steps, starting at the position $\eta$ and progressing at an angle $\alpha$. At each step, the total number of electron-hole pairs created is determined. These are drifted to the collection side of the silicon, taking account of diffusion and of the Lorenz angle. The charge is divided between the readout strips and random noise added. Each of these steps is now detailed followed by a description of the algorithm used to reconstruct the particle position.