Silicon detector
studies
Notes
(*) Irradiations were performed in November '98, with the
24 GeV/c CERN/PS proton beam. The cumulated fluence is 3 1014
cm-2.
(**) Irradiations were performed in April '99, with the 24 GeV/c CERN/PS
proton beam. The cumulated fluence is 3 1014 cm-2.
(***) Irradiations were performed in July '99, with the 24 GeV/c CERN/PS
proton beam. The cumulated fluence is 3 1014 cm-2.
(****) Irradiations were performed in November '99, with the 24 GeV/c
CERN/PS proton beam. The cumulated fluence is 3 1014 cm-2.
Reverse current vs bias
Non irradiated Hamamatsu 98
Non irradiated Hamamatsu W12-37055
family
Non irradiated Hamamatsu SXX-37160
family (thin detectors)
Non irradiated Micron 98
Irradiated Hamamatsu (*)
Irradiated Micron 98
(*)
Irradiated Hamamatsu SXX-37160
(**)
Back plane capacitance vs bias
Non irradiated Micron.
Non irradiated Hamamatsu 300
and 250 micron thick.
Irradiated (*) Micron : Micron Wedge 1732-2-1,
Micron Wedge 1732-2-2 Micron
Wedge 1733-2-1
Irradiated (*): STX41618-11,
STX41618-12
.
Interstrip capacitance
Non irradiated Hamamatsu
W12
Non irradiated Micron
1733-2-2
Irradiated Hamamatsu STX41618-12,
short strips (*)
Irradiated Hamamatsu STX41618-12,
long strips (*)
Irradiated Micron 1732-2-1,
short strip (*)
Irradiated Micron 1732-2-2,
short strip (*)
Irradiated Micron 1732-2-2
long strip (*)
Strip integrity
Irradiated (*) MICRON 1732-1-1,
1732-2-2,
1733-2-1
Irradiated (*) Hamamatsu STX41618-12
Noise
measurements
Noise vs bias for irradiated detectors.
Micron (*) 1732-2-1
Micron (*) 1733-2-1
Micron (*) 1732-2-2
Hamamatsu (*) STX41618-11
Hamamatsu (**) SXX -37160
family (thin detectors)
Studies for CDF
Full depletion voltage vs operation
time at various temperature
Currents for operations at various temperature
(fluence
in neutron cm-2):
Strip current (strip width
= 50 micron, length = 15 cm, detector thickness = 300 micron)
Volume current
Total reverse current of Layer00 prototype
detectors.
Interstrip capacitance of Layer00 prototype detectors: MSL
1721-24
Interstrip capacitance of new (08/99) Layer00
prototype detectors.
Oxygen enrichment technique
I've conceived the high temperature diffusion technique to introduce
high concentrations of oxygen into silicon wafers. This development was
done in the frame of RD48 collaboration. It can be used for other fast
diffusing element in silicon.
Text, Fig.1, Fig.2,
Fig.3
Also look in: http://www.brunel.ac.uk/research/rose/rosetn.htm
You can find further details in Chapter
5 and Appendix B of my PhD
thesis.
New results with oxygenated
diodes .....
-
Pad (5X5 mm2) diodes produced by SINTEF with oxygen diffused
silicon. Silicon wafers coated with a layer of SiO2 were diffused
in N2 or O2 atmosphere for 60 hours at 1150
oC.
The diodes were irradiated, together with a standard reference sample,
in April '99, up to 3 1014 cm-2 with the 24
GeV/c CERN/PS proton beam, in successive steps of intermediate
fluences. They were annealed for 3 minutes @ 80 oC to complete
the beneficial annealing before the measurement. The
results are in term of full depletion
voltage vs fluence and reverse
current vs fluence.
-
Pad (5X5 mm2) diodes produced by Brookeven National
Laboratory (BNL) with oxygen diffused silicon. Silicon wafers coated with
a layer of SiO2 were diffused in N2 atmosphere for
9 days at 1200 oC. Non oxygenated diodes from similar
but non oxygenated wafer are used as a reference. The diodes were irradiated
in July '99, up to 8 1014 cm-2 with the 24
GeV/c CERN/PS proton beam, in successive steps of intermediate
fluences. They were annealed for 3 minutes @ 80 oC to complete
the beneficial annealing before the measurement. The
results are in term of full depletion
voltage vs fluence.
-
Pad (10X10 mm2) diodes produced by Micron Semiconductor
with oxygen diffused silicon. Silicon wafers coated with a layer of SiO2
and wafers with surface implantation of oxygen ions were diffused in N2
atmosphere for 60 hours at 1100 oC. Non oxygenated
diodes from similar but non oxygenated wafer are used as a reference.
The
diodes were irradiated in July '99, up to 4 1014 cm-2
with the 24 GeV/c CERN/PS proton beam, in successive steps of
intermediate fluences. They were annealed for 3 minutes @ 80 oC
to complete the beneficial annealing before the measurement.
The
results are in term of full depletion
voltage vs fluence.
-
The charge collection properties of oxygenated and control (standard) diodes
are compared before irradiation
and after 1.7 1014
p cm-2 , 4.0 1014
p cm-2 and 8.0 1014
p cm-2 usiing various diodes from diferent producers. They were
annealed for 3 minutes @ 80 oC to complete the beneficial
annealing before the measurement.
and some more with large
area detectors .....
Can the oxygenation technique be used for the production of large area
segmented detector? Firsts results with microstrip detectors processed
by MICRON on 4" <100> silicon substrate oxygenated for 110 hours at
1100 oC. A standard silicon detector is used for control.
Preirradiation measurements:
I-V
Intrstrip capacitance: oxygenated
and control
Strip vs backplane
capacitance.
Measurements after irradiation (***):
I-V's: comparison
between oxygenated and control.
C-V's: comparison between
oxygenated and control.
Intrstrip capacitance: oxygenated
and control
Charge collection efficiency: comparison
between MICRON microstrip (6x6 cm2) control un-oxygenated and
oxygenated
detectors with laser (1064 nm) and source (106Ru) signals.
All the measurements after irradiation have been performed on detectors
having completed the beneficial annealing phase.
October '99
Preirradiation measurements:
I-V's of standard and oxygenated
Micron wedge detectors and of the corresponding miniature
detectors.
C-V's of some standard and oxygenated
Micron wedge detectors
Measurements after irradiation:
P-type microstrip detectors
(thanks
to Moshe Hanlon)
Before irradiation:
CV of 1728-5 (M. H.)
CV of 1728-25 (M. H.)
CV of 1729-7 (M. H.)
Strip integrity before irradiation (M. H.): 1728-5,
1728-25,
1729-7.
Results after irradiation (**):
IV's of 1728-25 and 1729-7
Interstrip capacitance;
central strip to two nearest neighbours each side
Interstrip capacitance;
central strip to one nearest neighbour each side, with comparison to pre-irradiation
values
RD 99
... or the 4th International Conference on Large Scale Applications
and Radiation Hardness of Semiconductor Detectors (Firenze, Italy, 23-25
June 1999)
I have presented some results concerning changes in interstrip capacitance
and noise in microstrip detectors made by Micron on 6" <100> substrate
or
by Hamamatsu on 4" <111> substrate.
Here you can find the article.
Radecs 99
....or the 5th EUROPEAN CONFERENCE: Radiation and its effects on components
and systems (Abbaye de Fontevraud, FRANCE, Maine et Loire, 13 - 17 septembre
1999).
I have presented some results concerning p-type detectors and oxygenated
material to the Radecs 99 conference.
Here you can find the poster
and the article.
If you want to take a look to
my thesis (again on silicon detectors)
PhD thesis (Université Joseph Fourier
- Grenoble I, France): The effect of hadron irradiation on the electrical
properties of particle detectors made from various silicon materials. Text
is in english.
For comments etc. please contact Gianluigi
Casse
Last modified: 5/10/99
Contact Information
E-Mail:
<gcasse@hep.ph.liv.ac.uk>
Phone:
+44 151 794 3399
Fax:
+44 151 794 3444
Postal Address:
University
of Liverpool - Department of Physics
Oliver Lodge Laboratory
Oxford Street
Liverpool L69 7ZE
United Kingdom