Liverpool Studies of
Hamamatsu vs SGS Thomson Layer00 detectors


Strip Failures  @ 50V @ 100V Comments 
SGS Thomson (~2.5 detectors measured) 2.8% 3.7%  Out of specification.
Those failing at 100V do not subsequently hold any voltage. See example
Hamamatsu <0.5% <0.5%  We have no reason to disagree with the manufacturers own results which indicate <0.1% See example
Specifications: < 1.28% bad strips. Max bad strips: 2 (type A), 1 (type B) > 100V coupling capacitor breakdown

 
NOTE: Some of the SGS Thompson detectors/regions studied show the very long time constant behaviour (as measured in Liverpool and also by Ronan and Tara at FNAL). For these we cannot measure the strip failures as at short times the currents are up to mA levels (these are not included in the bad-strip estimates). This behaviour needs further studies as there is clearly some associated `memory' with strips which have been held at high voltage for any length of time, subsequently showing much faster recovery from the application of high voltage.

 
 
Strip Resistance  Total (Ohms) Ohms/cm Comments 
SGS Thomson 280 36  Out of specifications 
Hamamatsu 190 24   
Specification: < 30 Ohms/cm

 
 
I-V characteristics  Reverse current @ 350V [nA] Reverse current @ 500V [nA] Comments 
SGS Thomson "Type B" ~15 ~20  
Hamamatsu "Type B" ~50 ~50  
Specification: 4uA (type A) , < 2uA (type B)

 
NOTE: SGS Thomson values look remarkably low (here you find the plot). Anyway, after irradiation the current is dominated by the induced defects in the substrate so starting currents are not terribly significant.
 
 
Bias-resistor Values Det. #1 [kOhms] Det. #2 [kOhms] Det. #3 [kOhms] Comments 
SGS Thomson 760+/-20 800+/-20 840+/-20 Out of specification 
Hamamatsu 2400+/-100 2400+/-100 2400+/-100  
Specification: 2.5 +/- 0.5 MOhms

 
NOTE: We measured very low resistor values on the 4th detector (30-40 kOhms). Actually, this result was obtained after the strip quality measurement, when a bias of -100 V was put through the coupling capacitors. Measuring the resistors with the voltage across the oxide resulted in this low value. Grounding the strips and repeating the measurement resulted in a resistor value in good agreement with that reported above. 
 
 
Interstrip Capacitance pF cm-1 Comments 
SGS Thomson ~ 0.8 See note 
Hamamatsu ~ 1 See note 
Specification: < 1.2 pF cm -1 interstrip capacitance (The total capacitive load will also include a ~0.2 pF cm-1 contribution to the backplane.)

 
NOTE: The interstrip capacitance is genuinely lower for the SGS Thomson at the frequencies we can study (it looks to get closer to the Hamamatsu values at higher frequency:see plot). There is voltage dependence but a resonable estimate is 1pF/cm for the Hamamatsu and 0.8pF/cm for the SGS Thomson. ATLAS results after irradiation showed that <100> material such as Thomson may be using did show a lower interstrip capacitance than the <111> used by Hamamatsu but with a very strong frequency dependence. The difference reduces with frequency and as far as the actual results with fast electronics are concerned (ie at 40MHz) no appreciable difference in noise was observable for irradiated detectors.

 
 
Full depletion voltage: We have not checked the depletion voltages. We know these are supposed to be well over 100V for the SGS Thomson - OUT OF SPECIFICATION, but this would not in itself constitute a major issue except that the capacitors are not rated to the required depletion voltages. For Hamamatsu all the results on strip failures are at 100V which is well above the required operating voltage of the detectors.
Specification: 60V < V_dep <100V

 

FINAL REMARKS



Further information on Liverpool studies of Hamatsu and Micron detectors can be found here.