[Hvcmos] Fwd: CERN Detector Seminar - Friday 6 December - 11:00 - 40/S2-D01 (Salle Dirac)
Jan Hammerich
jhammerich at hep.ph.liv.ac.uk
Tue Dec 3 15:50:06 GMT 2024
FYI, in case you didn't get the invite.
-------- Forwarded Message --------
Subject: CERN Detector Seminar - Friday 6 December - 11:00 - 40/S2-D01
(Salle Dirac)
Date: Mon, 2 Dec 2024 14:27:51 +0000
From: EP Seminars and Colloquia <EP-seminars.colloquia at cern.ch>
To: EP-Seminars-announcement (People interested in EP Seminars and
Colloquia) <EP-Seminars-announcement at cern.ch>
Dear all,
In the next EP Detector Seminar, we will have a presentation on the
following topic: *CMOS Monolithic Active Pixel Sensors: challenges and
perspectives*
Itwill be given on *Friday,**6 December at 11:00 *in
room*4**0/S2-D01(Salle Dirac)*
Connection details are given on the indico
page:https://indico.cern.ch/event/1461789/
_Title and Speaker_:
*CMOS Monolithic Active Pixel Sensors: challenges and perspectives*
*by Walter Snoeys (CERN)*
_Abstract_:
CMOS cameras revolutionized the visible imaging world, and now move into
other fields. CMOS Monolithic Active Pixel Sensors (CMOS MAPS) have
been successfully used in the STAR experiment and are now taking data in
the 10 m2 Inner Tracker System (ITS2) of the ALICE experiment at CERN.
CMOS MAPS in high energy physics (HEP) continue to be the object of
intense research and development, for instance in EP R&D WP1.2 and DRDs,
and for future ALICE and LHCb upgrades, and detectors at FCC. CMOS
MAPS for HEP face very different requirements, but their development
greatly benefits from the progress of CMOS imagers for visible light,
the integration offered by stitching and wafer stacking, as well as
trends in mainstream CMOS.
3D wafer stacking and stitching are now well established for CMOS
sensors for visible light, and stacking is also now intensely pursued in
mainstream CMOS. Advances in CMOS technology bring pixel pitches well
below 10 micron for HEP within reach, significant radiation tolerance,
increased resolution of our measurements and potential impact in other
fields. The development requires expertise in digital-on-top design and
design verification to deal with the increasing circuit complexity, and
expertise in devices and technology supported by TCAD and Monte Carlo
simulations for sensor optimization. Design for yield, lower power
densities reducing on-chip resistive drops, together with efficient
volume test, assembly, and mounting, will be enablers for large area
detectors and larger production volumes. This presentation will try to
give an overview.
_Organized by_: Michael Campbel
/Coffee will be served at 10:30/
Kind regards,
CERN, EP Department
Seminars and Colloquia Secretariat
-------------- next part --------------
An HTML attachment was scrubbed...
URL: <http://hep.ph.liv.ac.uk/pipermail/hvcmos/attachments/20241203/7612e143/attachment.html>
-------------- next part --------------
A non-text attachment was scrubbed...
Name: eventDetector-seminar-6Dec2024.ics
Type: text/calendar
Size: 2332 bytes
Desc: not available
URL: <http://hep.ph.liv.ac.uk/pipermail/hvcmos/attachments/20241203/7612e143/attachment.ics>
More information about the Hvcmos
mailing list