You can find here my PhD thesis (done at CERN) on radiation hardness of silicon detectors.

Some article about studies on silicon detectors:
                      Scanning of irradiated silicon detectors using a particles and low energy protons
                      Charge Transport in Non-Irradiated and Irradiated Silicon Detectors

The high temperature oxygen diffusion technique in silicon wafers:
                      Introduction of high oxygen concentrations into silicon wafers by high temperature diffusion
                      Text, Figure 1, Figure 2, Figure 3.
 

• My publication list:

1.   G. Gramegna et al. Designing a linear Silicon Drift Detector, IEEE Trans. on Nuclear Science, vol. 42, Nº 5 (1995).

2.    S.Beole' et al. Step towards the use of Silicon Drift Detectors in heavy ion collisions at LHC, Nuclear Instruments and Methods in Physics Research A 360 (1995) 67-70, North-Holland, Amsterdam.

3.   G. Gramegna et al. Use of field plate in linear silicon drift detector (SDD), 6th Pisa Meeting on advanced detectors, Elba 22-28 May 1994, Nuclear Instruments and Methods in Physics Research A 360 (1995) 110, North-Holland, Amsterdam.

4.   S. Beole' et al. Silicon drift detector; studies about geometry of electrodes and production technology, Nuclear Instruments and Methods in Physics Research A 377 (1996) 393-396, North-Holland, Amsterdam.

5.   B. Dezillie et al. Experimental results on radiation-induced bulk damage effects in Float-Zone and epitaxial silicon detectors, Nuclear Instruments and Methods in Physics Research A 386 (1997) 162-166, North-Holland, Amsterdam.

6.   R. Bates et al. Measurement of high-intensity proton-beam profile with a GaAs SIU surface barrier detector, Nuclear Instruments and Methods in Physics Research A 395 (1997) 26-28, North-Holland, Amsterdam.

7.   G. Casse et al. Radiation hardness of single-pad detectors made of non-standard silicon materials, Nuclear Instruments and Methods in Physics Research A 409 (1998) 129, North-Holland, Amsterdam.

8.   G. Casse et al. Impact of mesa and planar processes on radiation hardness of silicon detector, CERN-ECP/97-09, 13 January 1998 and Nuovo-Cimento-A (Italy), vol.112 A, no.1-2, p.1-12, Jan.-Feb. 1999.

9.   G. Casse et al. Charge collection properties of proton irradiated silicon diodes under LED red light illumination, CERN-EP/98-61.

10.   G. Casse Influence of Oxygen concentration on radiation hardness of silicon detectors DESY-PROCEEDINGS-1998-02.

11.   S. Pospisil et al. Charge collection efficiency of silicon detectors measured with heavy charged particles, DESY-PROCEEDINGS-1998-02.

12.   G. Casse and E. Grigoriev Charge collection studies of irradiated detectors with red LED injection, DESY-PROCEEDINGS-1998-02.

13.   A. Ruzin et al. Microscopic measurements of FZ silicon with and without Oxygen, DESY-PROCEEDINGS-1998-02.

14.   G. Casse et al. Study of evolution of active volume in irradiated silicon detectors,   CERN-EP/98-61, Nuclear Instruments and Methods in Physics Research A 426 (1999) 140-146.

15.   A. Ruzin et al. Studies of radiation hardness of oxygen enriched silicon detectors, CERN-EP/98-62, Nuclear Instruments and Methods in Physics Research A 426 (1999) 94-98.

16.   C. Leroy et al. Study of Charge transport in non-irradiated and irradiated silicon detectors, CERN-EP/98-105, to be published on Nuclear Instruments and Methods in Physics Research A.

17.   G. Casse et al. Introduction of high oxygen concentrations into silicon wafers by high temperature diffusion, to be published on NIMA.